Carrier-induced energy shift in GaAs/AlGaAs multiple quantum well laser diodes
نویسندگان
چکیده
منابع مشابه
Characterization of the carrier transports in quaternary AlInGaN multiple quantum well light-emitting diodes
The anomalous Berthelot-type optical properties of quaternary AlInGaN heterostructure with different quantum well pairs have been systematically investigated in this study. The Berthelot-type model refers to the temperature dependence of emission intensity with blue then red shift behavior in disorder material system. The photoluminescence of the AlInGaN heterostructures is also found to exhibi...
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.............................................................................................................................. ii Acknowledgements ............................................................................................................ iii Table of
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iii This dissertation is dedicated to my parents and my wife, Taehee. Their support and love have encouraged me on this long path. iv ACKNOWLEDGEMENTS I would like to express my appreciation to my thesis advisor, Prof. Martin Brooke, for his constant support throughout my Ph.D. experience. I also would like to thank Prof.
متن کاملMOCVD growth and characterization of AlGaInN multiple quantum well heterostructures and laser diodes
We demonstrate room temperature, pulsed, current-injected operation of InGaAlN heterostructure laser diodes with mirrors fabricated by chemically assisted ion beam etching. The multiple quantum well devices were grown by organo–metallic vapor phase epitaxy on c-face sapphire substrates. The emission wavelengths of the gain-guided laser diodes were 400 nm. The lowest threshold current density ob...
متن کاملLaser-induced quantum coherence in a semiconductor quantum well.
The phenomenon of electromagnetically induced quantum coherence is demonstrated between three confined electron subband levels in a quantum well which are almost equally spaced in energy. Applying a strong coupling field, two-photon resonant with the 1-3 intersubband transition, produces a pronounced narrow transparency feature in the 1-2 absorption line. This result can be understood in terms ...
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ژورنال
عنوان ژورنال: IEEE Journal of Quantum Electronics
سال: 1993
ISSN: 0018-9197
DOI: 10.1109/3.250382